Pocket/Halo Implant
iStar's individual pad tilt angle control (+45° to -45°) makes it ideal to perform Pocket/Halo implant at single wafer system's flexibility, but with batch system's productivity advantage.

Source Drain Extension (SDE) or Lightly Doped Drain (LDD) Implant
iStar's energy contamination control produces a precise implant profile than other high current implanters, and enables USJ formation for advanced technology node.
To prevent the pattern collapse defect typically seen in other conventional batch implanters, iStar's capability in reducing the spin speed down to 50 rpm, and coupled with the unique reversed spin technology, eliminates the damage risk of pattern collapse sensitive applications.

Source Drain and Contact Implant
iStar's industry leading high beam current combines with mechanical throughput of 220WPH for 300 millimeter wafers, set a new benchmark for high current implanter productivity and the reduction of cost of ownership.